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Class D Amplifier Peformance Relationship to MOSFET Parameters - International Rectifier
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Class D Amplifier Peformance Relationship to MOSFET Parameters - International Rectifier


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International
APPLICATION NOTE
Application Note AN-1070
Class D Audio Amplifier Performance Relationship
to MOSFET Parameters
By Jorge Cerezo, International Rectifier Table of Contents
Page
Abstract............................................................................................................2
Introduction......................................................................................................2
Key MOSFET Electrical Parameters in Class D Audio Amplifiers....................2
Drain Source Breakdown Voltage BVDSS................................................2
Static Drain-to-Source On Resistance RDS(on).........................................4
Gate Charge Qg......................................................................................5
Body Diode Reverse Recovery Charge, Qrr...........................................8
Internal Gate Resistance RG(int)........................................................11
MOSFET Package..................................................................................11
Maximum Junction Temperature.............................................................12
International Rectifier Digital Audio MOSFET...................................................13
Conclusions.........................................................................................14
References........................................................................................................14
This application note discusses key parameters to be considered in the selection of MOSFETs for class D amplifier and their relationship with amplifier performance such as efficiency, EMI, and THD. In addition, benefits and advantages of IR Digital Audio MOSFETs in class D audio amplifier are presented.
AN-1070
www.irf.com
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