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Silicon Switching Diode - Infineon Technologies - Sensors


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BAL74/BAR74...

Silicon Switching Diode • For high-speed switching applications • Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101 BAL74BAR74

Type Package Configuration Marking BAL74BAR74 SOT23 SOT23 single single JCs JBs

Maximum Ratings at T
A = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V
R 50 V Peak reverse voltage V
RM 50 Forward current I
F 250 mA Peak forward current I
FM - Surge forward current, t = 1 µs I
FS 4.5 A Non-repetitive peak surge forward current I
FSM - Total power dissipation P
tot 370 mW T
S ≤ 54°C Junction temperature T
j 150 °C Storage temperature T
stg -65 ... 150

Thermal ResistanceParameter Symbol Value Unit Junction - soldering point

2)

, BAL74, BAR74 R

thJS

≤ 260 K/W

1 Pb-containing package may be available upon special request 2 For calculation of R thJA please refer to Application Note Thermal Resistance

2007-04-191


pageCatalog pdf di En 2012-05-22-30