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IDB06S60C

Schottky Diodes - 17914 2

nd

Generation thinQ!

TM

SiC Schottky Diode

Product Summary Features V
DC 600 V • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark• No reverse recovery/ No forward recovery• No temperature influence on the switching behavior• High surge current capability • Pb-free lead plating; RoHS compliant• Qualified according to JEDEC Q
c 15 nC I
F 6 A D
2 PAK (PG-TO220-3-45)
1) for target applications• Breakdown voltage tested at 5mA
2) • CCM PFC • Motor Drives thinQ! 2G Diode designed for fast switching applications like: Maximum ratings, at T Type Package Marking Pin 2 Pin 3 IDB06S60C D
2 PAK (PG-TO220-3-45) D06S60C C A Rev. 2.1page 12009-01-07
j =25 °C, unless otherwise specified ParameterSymbolConditionsUnit Value Continuous forward current I
F T
C <135 °C6ARMS forward current I
F,RMS f =50 Hz9Surge non-repetitive forward current, sine halfwave I
F,SM T
C =25 °C, t
p =10 ms46Repetitive peak forward current I T
j =150 °C,
F,RM T
C =100 °C, D =0.124Non-repetitive peak forward current I
F,max T
C =25 °C, t
p =10 µs210 i ² t value i
2 d tT
2 C =25 °C, t
p =10 ms10A sRepetitive peak reverse voltage V
RRM 600VDiode ruggedness dv/dtd v/ d t V
R =0…480V50V/nsPower dissipation P
tot T
C =25 °C52WOperating and storage temperature T
j , T
stg -55 ... 175°C