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| | | Plasma Monitor | | |
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| | | This system monitors the plasma emissions derived by semiconductor manufacturing processes such as etching, sputtering and CVD. | | OPlasma process monitor C7460 | | |
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| | | The C7460 makes real-time, multi-band measurement of plasma emissions that are derived by the semiconductor manufacturing processes. Besides monitoring the plasma condition, the C7460 also has versatile analysis functions to detect etching end points, optimize the process conditions, find the plasma seed, and optimize the cleaning cycle, etc. | | |
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| | | •End-point detection in crytical etching process | | |
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| | | Internal Observation The internal structures of semiconductor devices such as Si wafer, Flip-chip package, MEMS (Micro Electro Mechanical Systems), CSP (Chip Size Package) can be observed through silicon substrate by infrared light. | | |
| | | •IC internal observation •Void observation of SOI wafer | | |
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| | | ■ Infrared Semiconductor Internal Observation System C9597 | | |
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| | | C9597 can observe the internal structures of semiconductor devices such as Si wafer, Flip-chip package, MEMS, CSP using a near infrared light with high resolution, high sensitivity and high S/N. | | |
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| | | Thickness Measurement This instrument optically measures wafer thickness without any contact to the wafer surface. Wafer thickness can be monitored even during wet etching process. | | |
| | | •Example of in-situ monitoring (under wet etching) | | |
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| | | 2500 | | |
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| | | 400 | | |
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| | | 2000 | | |
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| | | E | | |
| | | E | | |
| | | 300 | | |
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| | | 1500 | | |
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| | | ■ Optical MicroGauge C8125-01 | | |
| | | 1000 | | |
| | | 200 | | |
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| | | J2 | | |
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| | | The C8125-01 measures the wafer thickness with a newly developed inhouse technique (patent pending) utilizing optical interference. The accurate thickness of the wafer itself can be measured without being affected by the protective film and patterns. | | |
| | | 500 | | |
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| | | 100 | | |
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| | | 0 100 200 300 400 500 Time (second) | | |
| | | 0 200 400 600 800 1000 1200 intensity (count) | | |
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| | | •Measurement of wafer thickness distribution (Thickness distribution: 70 urn to 76 urn) | | |
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| | | Sample: 8-inch silicon bare wafer with protective film (after grinding process) | | |
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| | | 17 | | |
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