PHOTODETECTORS PHOTODETECTORS ION / ELECTRON DETECTOR MCP ASSEMBLY F9892-12
High Time Resolution & Fast Time Response TOF-MS Detector Less Ringing: 3 % & High Voltage Floating Operation Less Ringing: 3 % & High Voltage Floating Operation Less Ringing: 3 % & High Voltage Floating Operation
The F9892-12 is an ideal detector with a large effective area of 40 mm diameter, and is designed to per-mit floating operation at the input surface voltage of 10 kV. The output waveform has almost no ringing.
TMCPB0087EATMCPB0088EB FWHM1.2 nsFWHM1.2 ns Floating Voltage Floating Voltage 10 kV 10 kV
Effective area: 40 mmMCP channel diameter: 6 10 mNumber of MCP stages: 2
Gain: 1 >
MCP-INPUT SIDEFLOATING VOLTAGE
0 kV
-10 kV
+10 kV 6 OUTPUT VOLTAGE (mV) OUTPUT VOLTAGE (mV) -60-50-40-30
-20
-10010 RISE TIME: 590 psFALL TIME: 940 ps -70 -120-100-80-60-40-20020 RESPONSE TIME (5 ns/div.) RESPONSE TIME (1 ns/div.) Small Time Jitter from Flat MCP Small Time Jitter from Flat MCP Small Time Jitter from Flat MCP
There are two major factors creating time jitter. One factor is a warp of MCP which has larger effect on the time jitter. The other is a combination of the channel diameter and bias angle.
AB
Ion transit time differencedue to warp of MCP Ion transit time difference
due to input position in channel
A combination of the channel diameter and bias angle
6 m12 6 m8 12 m12 12 m8 ION ION IONIONIONION Flatness
∆ T 1 ∆ T 2 ∆ T 2 ∆ T 2 10 10 m mFlatness
∆ T 2 TIME JITTER COMPARISON
m) FactorJitterSum (ns)Warp ( Channel Dia. ( m)Bias angle ( 6126200.52004.61282.0 ) 120.7 81.0 121.3 82.0 120.7 81.0 121.3 >
Effective area: 40 mmMCP channel diameter: 6 mThickness: 0.3 mm ∆ T >
1 (ns) ∆ T >
2 (ns)ABAB 0.84 1.12 1.39 2.06 4.65 4.71 4.78 5.02 * Ion mass: 1000 u., Ion acceleration voltage: 10 kV, calculation data >
FAST DECAY PHOSPHOR J9758
For Electron Beam Detection ■ Phosphor Decay Characteristics
J9758 >
TPMOB0184EA ■ FEATURES
● Short decay time ● Long life ● High luminescence efficiency
Decay Time Decay Time 2.3 ns 2.3 ns
9 mm >
■ APPLICATIONS
J9758 >
● Semiconductor inspection instrument
RELATIVE OUTPUT (%) -21
10
100
02 468 Application Product ELECTRON DETECTION UNIT H8770 >
● General electron detection
TIME (ns) 13