FGPF4536 360V, PDP IGBT
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©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF4536 Rev. A FGPF4536 360V, PDP Trench IGBT August 2010 Absolute Maximum Ratings Thermal Characteristics Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5ìsec * Ic_pluse limited by max Tj Symbol Description Ratings Units VCES Collector to Emitter Voltage 360 V VGES Gate to Emitter Voltage ± 30 V IC pulse(1)* Pulsed Collector Current @ TC = 25oC 220 A PD Maximum Power Dissipation @ TC = 25oC 28.4 W Maximum Power Dissipation @ TC = 100oC 11.4 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Symbol Parameter Typ. Max. Units RèJC(IGBT) Thermal Resistance, Junction to Case - 4.4 oC/W RèJA Thermal Resistance, Junction to Ambient - 62.5 oC/W TO-220F G C E (Retractable) FGPF4536 360V, PDP IGBT Features • High current capability • Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A • High input impedance • Fast switching • RoHS compliant Application • PDP System General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGPF4536 Rev. A 2 www.fairchildsemi.com FGPF4536 360V, PDP Trench IGBT Package Marking and Ordering Information Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGPF4536 FGPF4536TU TO-220F Tube 50ea - Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250ìA 360 - - V ÄBVCES ÄTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250ìA - 0.4 - V/o C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - -...

FGPF4536 Rev. A 3 www.fairchildsemi.com FGPF4536 360V, PDP Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics Characteristics Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE Temperature at Variant Current Level 0 1 2 3 4 5 6 0 50 100 150 200 20V 12V TC = 25oC 15V 10V VGE = 8V Collector Current, IC [A] Collector-Emitter Voltage, VCE [V] 0 1 2 3 4 5 6 0 50 100 150 200 12V 10V 20V TC = 125oC 15V VGE = 8V Collector...

FGPF4536 Rev. A 4 www.fairchildsemi.com FGPF4536 360V, PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs. 0 4 8 12 16 20 0 4 8 12 16 20 IC = 20A 50A 30A Common Emitter TC = 125oC Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage, VGE [V] 0.1 1 10 30 0 400 800 1200 1600 2000 2400 Common Emitter VGE = 0V, f = 1MHz TC = 25oC Cres Coes Cies Capacitance [pF]...

FGPF4536 Rev. A 5 www.fairchildsemi.com FGPF4536 360V, PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs. Collector Current Collector Current Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current Figure 17. Turn off Switching SOA Characteristics 10 20 30 40 50 1 10 100 Common Emitter VGE = 15V, RG = 5Ù TC = 25oC TC = 125oC tr td(on) Switching Time [ns] Collector Current, IC [A] 10 20 30 40 50 10 100 400 Common Emitter VGE = 15V, RG = 5Ù TC = 25oC TC = 125oC td(off) tf...

FGPF4536 Rev. A 6 www.fairchildsemi.com FGPF4536 360V, PDP Trench IGBT Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT 10-5 10-4 10-3 10-2 10-1 1 10 102 0.01 0.1 1 8 0.05 0.01 0.02 0.1 0.2 single pulse Thermal Response [Zthjc] Rectangular Pulse Duration [sec] Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.5 t1 PDM t2

FGPF4536 Rev. A 7 www.fairchildsemi.com FGPF4536 360V, PDP Trench IGBT Dimensions in Millimeters Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2700V

FGPF4536 360V, PDP Trench IGBT FGPF4536 Rev. A 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING...