5 pages in the catalogue
Ku-Band Internally Matched FET |
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Ku-Band Internally Matched FET p 1
Edition 1.2 July. 2008 1 Ku-Band Internally Matched FET FEATURES EHigh Output Power: P1dB=39.5dBm(Typ.) EHigh Gain: G1dB=6.0dB(Typ.) EHigh PAE: add=30%(Typ.) EBroad Band: 13.75`14.5GHz EImpedan... |
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Ku-Band Internally Matched FET p 2
-60 -50 -40 -30 -20 26 28 30 32 34 36 28 30 32 34 36 38 40 42 22 24 26 28 30 32 34 36 Pin [dBm] Pout [dBm] 0 10 20 30 40 50 60 70 Power Added Efficiency ELM1314-9F Ku-Band Internally Matched FET 2 IM3... |
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Ku-Band Internally Matched FET p 3
ELM1314-9F Ku-Band Internally Matched FET 3 VDS=10VAIDSiDC)1.75A freq[GHz] MAG ANG MAG ANG MAG ANG MAG ANG 13.5 0.554 40.3 2.074 -171.5 0.057 154.6 0.609 54.7 13.6 0.500 33.3 2.165 178.0 0.066 146... |
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Ku-Band Internally Matched FET p 4
ELM1314-9F Ku-Band Internally Matched FET Package Out Line Case Style : IA 4 PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm ‚P ‚Q ‚R ‚S ... |
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Ku-Band Internally Matched FET p 5
Ku-Band Internally Matched FET 5 CAUTION Eudyna Devices Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observ... |
