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SDRAM EM488M3244VTB - eGismos


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Text version of the page
CŰVCX
EM488M3244VTB
256Mb (2Mx4Bankx32) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge
• Single 3.3V +0.3V Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
- Sequential (B/L = 1/2/4/8/full Page)
- Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of the System Clock
• Auto Refresh and Self Refresh
• 4,096 Refresh Cycles / 64ms (15.625us)
Description
The EM488M3244VTB is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Meg words x 4 banks by 32 bits. All inputs and outputs are synchronized with the positive edge of the clock.
The 256Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 3.3V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVTTL. Available packages:TSOPII 86P 400mil.
Ordering Information
Part No
Organization
Max. Freq
Package
Grade
Pb
EM488M3244VTB-75F
8M X 32
133MHz @CL3
86pin TSOP(ll)
Commercial
Free
EM488M3244VTB-7F
8M X 32
143MHz @CL3
86pin TSOP(ll)
Commercial
Free
EM488M3244VTB-6F
8M X 32
166MHz @CL3
86pin TSOP(ll)
Commercial
Free
EM488M3244VTB-75FE
8M X 32
133MHz @CL3
86pin TSOP(ll)
Extended
Free
EM488M3244VTB-7FE
8M X 32
143MHz @CL3
86pin TSOP(ll)
Extended
Free
EM488M3244VTB-6FE
8M X 32
166MHz @CL3
86pin TSOP(ll)
Extended
Free
* EOREX reserves the right to change products or specification without notice.
Jul. 2006
www.eorex.com
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pageCatalog pdf di En 2012-05-22-29