MOBILE DDR SDRAM EM42AM3284LBA - eGismos - #1

The EM42AM3284LBA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 4Meg words x 4 banks by 32 bits. The 512Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the datafor both rising and falling edges of the system clock.It means the doubled data bandwidth can be achieved at the I/O pins. Available packages:TFBGA-90B(13mmx11mm).

• Internal Double-Date-Rate architecture with 2 Accesses per clock cycle.

• 1.8V +0.1V VDD/VDDQ

• 1.8V LV-COMS compatible I/O

• Burst Length (B/L) of 2, 4, 8, 16

• 3 Clock read latency

• Bi-directional,intermittent data strobe(DQS)

• All inputs except data and DM are sampled at the positive edge of the system clock.

• Data Mask (DM) for write data

• Sequential & Interleaved Burst type available •Auto Precharge option for each burst accesses

• DQS edge-aligned with data for Read cycles

• DQS center-aligned with data for Write cycles

• No DLL;CK to DQS is not synchronized

• Deep power down mode

• Partial Array Self-Refresh(PASR)

•Auto Temperature Compensated Self-Refresh (TCSR) by built-in temperature sensor

• Auto Refresh and Self Refresh

• 8,192 Refresh Cycles / 64ms

4: 4Bank L: 1.8V

* EOREX reserves the right to change products or specification without notice.