MOSFETs N Channel DMG1012T
6Pages

DMG1012T N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Case: SOT523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) Gate Protection Diode Equivalent Circuit Ordering Information (Note 3) Part Number DMG1012T-7 DMG1012TQ-7 Notes: Qualification Commercial Automotive Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code NA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) January 2012 © Diodes Incorporated

Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VGSS Continuous Drain Current (Note 4) Steady State Symbol PD RθJA TJ, TSTG Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage...

1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.3 0.6 0.9 1.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.6 0.9 1.2 1.5 ID, DRAIN CURRENT (A) Fig. 4 Typical...

VGS(TH), GATE THRESHOLD VOLTAGE (V) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE RθJA(t) = r(t) * RθJA RθJA = 486°C/W t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 0.01 0.1 1 t1, PULSE...

Package Outline Dimensions January 2012 © Diodes Incorporated

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