FETs - Clare - #1

r^J ADE CPC3703C

I j I j/\ K \~j N-Channel Depletion-Mode

ah ixYs company Vertical DMOS FETs

The CPC3703C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare's proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3703C is a highly reliable FET device that has been used extensively in Clare's solid state relays for industrial and telecommunications applications.

This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703C offers a low 4 ohm maximum on-state resistance at 25^oC.

The CPC3703C has a minimum breakdown voltage of 250V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.

• Depletion mode device offers low R_DS(ON) at cold temperatures

• Low on resistance 4 ohms max. at 25^oC

• High input impedance

• High breakdown voltage 250V

• Low V_GS(off) voltage -1.6 to -3.9V

• Small package size SOT-89

• Ignition modules

• Normally-on switches

• Solid state relays

• Converters

• Telecommunications

• Power supply

D

G

D

(SOT-89)

Vdd

0V

PULSE GENERATOR

INPUT

oOUTPUT

-10V

^Rgen

D.U.T.

Vdd

INPUT

OUTPUT

0V

DS-CPC3703C-R02.3