PEN DIELECTRIC – CB Series
GENERAL DESCRIPTION
Film chip
capacitor manufacturer using a naked and stacked construction withmetallized PEN (polyethylene naphtalate).
ADVANTAGES
• Use of high temperature dielectric films make thesecapacitors suitable for IR or vapor phase reflow processes.
This chip is built without specific encapsulation.• The intrinsic elasticity of the dielectric film allows anexcellent compatibility of the capacitor with all types of
material for printed circuit boards.• The self-healing property of film technology results to asafety open failure mode and better overall reliability.• Excellent thermal shock resistance.
• Low dissipation factor ESR & ESL.
• No piezoelectric effect.
• Available in tape and reel suitable for automatic placement.
• Non-polar construction.
APPLICATIONS
General purpose function in low voltage applications whereminiaturization and SMD is required. Typical applications
would be:• Automotive (Airbag, Fuel injection calculator...)
• Telecom (Public switching systems,
industrial modems, telephoneset, cordless, mobile)• Industrial (SMPS, Power convertor module...)
Outer LayerTermination Plating :100% matte SnNi Barrier UnderTerminationSilver EpoxyResinBrassActive Layers : PEN dielectric PERFORMANCE CHARACTERISTICS
Climatic Category55/125/56 Capacitance Range1nF to 4.7µF Tolerance on C
R ±5%, ±10% Nominal Voltages25Vdc to 630Vdc Test Voltage1.4Vr 2s to 25°C Soldering methodsIR or vapor phase reflow (not suitable for wave soldering) Tangent of Loss Angle at 1kHz (DF) < 100 x 10
-4 Insulation resistance minimum : IR for C ≤ 0.33µF IR > 1000 M Ω at 20°C for 1 min. charge at 10Vdc for VR < 100Vdc and 100Vdc for VR ≥ 100Vdcfor C > 0.33µF IR. C > 400sec. at 20°C for 1 min. charge at 10Vdc for VR < 100Vdc and 100Vdc for VR ≥ 100Vdc Temperature range -55°C to 125°C with voltage derating of 1.25%/°C between 105°C and 125°C
20