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Table 3-3. Resistance
ParameterMin ValueStandard MethodESD On pins. HBM (Human Body Model) CMOS I/O2 kVMIL-STD-883 - method 3015.7On die surface (Zapgun) Air discharge Number of cycles without lubricant multiply by an estimated factor of 20 for correlation with a real finger200 000MIL E 12397B ±16 kV NF EN 6100-4-2 Mechanical Abrasion Chemical Resistance Cleaning agent, acid, grease, alcohol, diluted acetone4 hoursInternal method
Table 3-4. Specifications
Explanation Of Test Levels I 100% production tested at +25°CII 100% production tested at +25°C, and sample tested at specified temperatures (AC testing done on sample)
III Sample tested onlyIV Parameter is guaranteed by design and/or characterization testingV Parameter is a typical value onlyVI 100% production tested at temperature extremesD100% probe tested on wafer at T
amb = +25°C
Table 3-5. Physical Parameter
ParameterTest LevelMinTypMaxUnit ResolutionIV50mSizeIV8 x 280PixelYield: number of bad pixels I5Bad pixels
Equivalent resistance on TPP pinI253045
6
AT77C102B
5364C–BIOM–3/07