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Counter, Photodiode, Receiver, Diode, Avalanche diode
Text version of the page
FEATURES DESCRIPTION APPLICATIONS
Low noise
Small size
High Speed
Low cost
SYMBOL PARAMETER MIN MAX UNITS
VBR Reverse Voltage 130 280 V
TSTG Storage Temperature -40 +85 C
TO Operating Temperature -40 +55 C
TS Soldering Temperature* +240 C
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
ID Dark Current 2 10 nA
CJ Junction Capacitance f = 1 MHz 2.5 pF
IN Noise Current Spectral Density f = 100 kHz 0.12 pA/Hz
lrange Spectral Application Range Spot Scan 400 1100 nm
R l= 660nm, VR = 0 V 30
Responsivity
l= 830nm, VR = 0 V 47
A/W
Vop Operating voltage 130 280 V
tr Response Time** RL = 50 , l= 675nm 0 .7 1 nS
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
SPECTRAL RESPONSE M = 100
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Wavelength (nm)
Responsivity (A/W)
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Small Area Silicon Avalanche Photodiode
SD 012-70-62-541
PACKAGE DIMENSIONS INCH / mm
TO-5 PACKAGE
The SD 012-70-62-541 is a 0.3 mm diameter
small area silicon avalanche photodiode (APD)
that provides high gain and low noise, packaged
in a hermetic TO-46 metal can with a flat window.
Military
Industrial
Medical
* 1/16 inch from case for 3 seconds max.
ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
R QE
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C and Gain = 100 at 830nm UNLESS OTHERWISE
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C and gain of 100 at 820nm UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 820nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 Phone (805) 987-0146 Fax (805) 484-9935 www.advancedphotonix.com
REV 8/22/06
CHIP DIMENSIONS INCH [mm]
TO-46 PACKAGE
PACKAGE DIMENSIONS INCH / mm
SPECTRAL RESPONSE
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