GaN UV Detectors - Advanced Photonix - #1

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FEATURES DESCRIPTION APPLICATIONS • 365nm UVA response • Visible & NIR blind • Photovoltaic operation • High shunt resistance SYMBOL PARAMETER MIN MAX UNITS VBR Reverse Voltage 5 V TSTG Storage Temperature -40 +90 °C TO Operating Temperature -30 +85 °C TS Soldering Temperature* +260 °C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current UVI = 1 1 nA ID Dark Current VR = 1V 0.05 1 nA RSH Shunt Resistance VR = 10 mV 0.45 1 GW CJ Junction Capacitance VR = 0V, f = 1 MHz 24 pF lrange Spectral Application Range Spot Scan 200 365 nm R Responsivity l= 350nm V, VR = 0 V 0.10 A/W VBR Breakdown Voltage I = 1ìA 10 V NEP Noise Equivalent Power VR = 10V @ l=Peak 1X10-13 W/
Hz tr Response Time RL = 1K,VR = 1V 10 15 nS SPECTRAL RESPONSE 0.000 0.001 0.010 0.100 1.000 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 Wavelength (nm) Responsivity (A/W) UV Enhanced GaN Detectors PDU-G101A The PDU-G101A is a GaN UV photodiode with a spectral range from 200nm to 365nm and is ideal for UVA sensing applications available in a TO-46 can package. • UVA power meters • Sun dosimeters • Flame detectors • UV instrumentation * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 4/19/07 ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] TO-46 PACKAGE .0126 [0.320] .0134 [0.340] .016 [0.40] SQ Ø.181 [4.60] VIEWING ANGLE .500 [12.70] .055 [1.40] 2X Ø.017 [0.43] .100 [2.54] 61° ACTIVE AREA = 0.076 mm ² CATHODE ANODE Ø.210 [5.35] CHIP Ø .118 [3.00] .087 [2.21]