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AAT7157

20V P-Channel Power MOSFET

TrenchDMOS

™

General Description Features

The AAT7157 low threshold 20V, dual P-channelMOSFETis a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT7157 is designed for use as a load switch in battery-powered applications and protection in bat- tery packs. ?V

DS(MAX)

= -20V?I

1 D(MAX)

= -5.8A@ 25°C?Low R

DS(ON)

:?36m Ω @ V

GS

= -4.5V?62m Ω @ V

GS

= -2.5V

Dual SOP-8LPackage Applications

Top View

•Battery Packs ?Battery-Powered Portable Equipment

D1D1D2D2 S1G1S2G2

Absolute Maximum Ratings

12348765

T

A

= 25°C, unless otherwise noted. SymbolDescriptionValueUnits

V
DS Drain-Source Voltage-20V V
GS Gate-Source Voltage±12 I
1 T
A = 25°C±5.8
D Continuous Drain Current @ T
J = 150°C T
A = 70°C±4.6A I
2 DM Pulsed Drain Current ±24 I
1 S Continuous Source Current (Source-Drain Diode) -1.5 P
1 T
A = 25°C2.0W
D Maximum Power Dissipation T
A = 70°C1.25T
J , T
STG Operating Junction and Storage Temperature Range-55 to 150°C

Thermal Characteristics

SymbolDescriptionValueUnits

R
1 θ JA Typical Junction-to-Ambient Steady State 100 R
1 θ JA2 Maximum Junction-to-Ambient t<10 Seconds 62.5°C/WR
1 θ JF Typical Junction-to-Foot 35
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R θ JF + R θ FA = R θ JA where thefoot thermal reference is defined as the normal solder mounting surface of the device's leads. R θ JF is guaranteed by design; however,R θ CA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.2. Pulse test: Pulse Width = 300µs. 7157.2005.05.1.1

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